Issued Patents 2023
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11854617 | Structure for multiple sense amplifiers of memory device | Ku-Feng Lin | 2023-12-26 |
| 11854656 | Memory refresh | — | 2023-12-26 |
| 11810611 | Method and system for refresh of memory devices | Yih Wang | 2023-11-07 |
| 11778924 | Magnetic device and magnetic random access memory | MingYuan Song, Shy-Jay Lin, William J. Gallagher | 2023-10-03 |
| 11763875 | Second word line combined with Y-MUX signal in high voltage memory program | Yoshitaka Yamauchi, Meng-Sheng Chang, Perng-Fei Yuh | 2023-09-19 |
| 11762732 | Memory error detection and correction | Yu-Der Chih, Hsueh-Chih Yang, Randy B. Osborne, Win-San Khwa | 2023-09-19 |
| 11742021 | Memory device with write pulse trimming | Yu-Der Chih, Yih Wang | 2023-08-29 |
| 11723218 | Semiconductor device and method for forming the same | Shy-Jay Lin, Chien-Min Lee, MingYuan Song, Yen-Lin Huang, William J. Gallagher | 2023-08-08 |
| 11682468 | Method and system for replacement of memory cells | — | 2023-06-20 |
| 11681468 | Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals | Shih-Lien Linus Lu, Yu-Der Chih, Yih Wang | 2023-06-20 |
| 11657873 | Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells | Perng-Fei Yuh, Yih Wang, Ku-Feng Lin, Jui-Che Tsai, Fu-An Wu | 2023-05-23 |
| 11631440 | Sensing amplifier, method and controller for sensing memory cell | Ku-Feng Lin, Yih Wang | 2023-04-18 |
| 11605427 | Memory device with write pulse trimming | Yu-Der Chih, Yih Wang | 2023-03-14 |
| 11574676 | Structure for multiple sense amplifiers of memory device | Ku-Feng Lin | 2023-02-07 |
| 11575387 | Symmetry unary code encoder | Win-San Khwa, Ku-Feng Lin | 2023-02-07 |
| 11545218 | Nonvolatile SRAM | Perng-Fei Yuh, Jui-Che Tsai, Yih Wang | 2023-01-03 |