Issued Patents 2023
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11810635 | Sense amplifier for coupling effect reduction | Ku-Feng Lin, Jui-Che Tsai, Yih Wang | 2023-11-07 |
| 11776595 | Memory device with source line control | Yih Wang | 2023-10-03 |
| 11763875 | Second word line combined with Y-MUX signal in high voltage memory program | Yoshitaka Yamauchi, Meng-Sheng Chang, Hiroki Noguchi | 2023-09-19 |
| 11735280 | Memory device and operating method of the same | Gu-Huan Li, Tung-Cheng Chang, Chia-En Huang, Chun-Ying Lee, Yih Wang | 2023-08-22 |
| 11688481 | Semiconductor memory devices with diode-connected MOS | Tung-Cheng Chang, Gu-Huan Li, Chia-En Huang, Jimmy Lee, Yih Wang | 2023-06-27 |
| 11682433 | Multiple stack high voltage circuit for memory | Meng-Sheng Chang, Tung-Cheng Chang, Yih Wang | 2023-06-20 |
| 11676676 | Merged bit lines for high density memory array | — | 2023-06-13 |
| 11664081 | Bit selection for power reduction in stacking structure during memory programming | Meng-Sheng Chang, Yoshitaka Yamauchi | 2023-05-30 |
| 11657873 | Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells | Yih Wang, Ku-Feng Lin, Jui-Che Tsai, Hiroki Noguchi, Fu-An Wu | 2023-05-23 |
| 11651819 | Memory circuit and method of operating the same | Shao-Ting Wu, Yu-Fan Lin | 2023-05-16 |
| 11601117 | Sense amplifier for coupling effect reduction | Ku-Feng Lin, Jui-Che Tsai, Yih Wang | 2023-03-07 |
| 11545218 | Nonvolatile SRAM | Jui-Che Tsai, Hiroki Noguchi, Yih Wang | 2023-01-03 |