Issued Patents 2021
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11171003 | Doping through diffusion and epitaxy profile shaping | Chih-Teng Liao, Yi-Wei Chiu, Chih Hsuan Cheng | 2021-11-09 |
| 11139174 | Method for forming features of semiconductor structure having reduced end-to-end spacing | Xi-Zong Chen, Yun-Yu Hsieh, Cha-Hsin Chao | 2021-10-05 |
| 11088025 | Contact structure for semiconductor device | Yun-Yu Hsieh, Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Ying Ting Hsia | 2021-08-10 |
| 11043251 | Magnetic tunnel junction device and method of forming same | Bo-Jhih Shen, Kuang-I Liu, Joung-Wei Liou, Jinn-Kwei Liang, Yi-Wei Chiu +4 more | 2021-06-22 |
| 11043427 | Method of manufacture of a FinFET device | Chia-Ching Tsai, Yi-Wei Chiu | 2021-06-22 |
| 11022878 | Critical dimension uniformity | Xi-Zong Chen, Cha-Hsin Chao, Yi-Wei Chiu, Chih-Hsuan Lin | 2021-06-01 |
| 11004730 | Methods of forming conductive features using a vacuum environment | Chia-Ching Tsai, Yi-Wei Chiu, Hung Jui Chang | 2021-05-11 |
| 10998259 | Semiconductor device and method of manufacture | Chia-Ching Tsai, Yi-Wei Chiu, Hung Jui Chang | 2021-05-04 |
| 10985053 | Contact plugs and methods of forming same | Xi-Zong Chen, Y. H. Kuo, Cha-Hsin Chao, Yi-Wei Chiu | 2021-04-20 |
| 10930783 | Semiconductor devices, FinFET devices with optimized strained source-drain recess profiles and methods of forming the same | Ying Ting Hsia, Kun-Yu Lin, Ying Wang | 2021-02-23 |
| 10910223 | Doping through diffusion and epitaxy profile shaping | Chih-Teng Liao, Yi-Wei Chiu, Chih Hsuan Cheng | 2021-02-02 |