Issued Patents 2021
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11133415 | Gradient doped region of recessed Fin forming a FinFET device | Jyun-Hao Lin, Yu-Chang Lin, Huicheng Chang | 2021-09-28 |
| 11127817 | Formation of semiconductor device structure by implantation | Tsan-Chun Wang, Chiao-Ting Tai, Che-Fu Chiu | 2021-09-21 |
| 11088249 | Semiconductor device with implant and method of manufacturing same | Yu-Chang Lin, Tien-Shun Chang, Huicheng Chang | 2021-08-10 |
| 11056573 | Implantation and annealing for semiconductor device | Yu-Chang Lin, Tien-Shun Chang, Szu-Ying Chen, Sen-Hong Syue, Huicheng Chang | 2021-07-06 |
| 11043580 | Method of manufacturing semiconductor devices | Tsan-Chun Wang, Chiao-Ting Tai | 2021-06-22 |
| 11031293 | Method for fabricating a semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2021-06-08 |
| 11011428 | Method for fabricating a semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2021-05-18 |
| 10930507 | Reduce well dopant loss in FinFETs through co-implantation | Sih-Jie Liu, Huicheng Chang | 2021-02-23 |
| 10916546 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2021-02-09 |