Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10964815 | CMOS finFET with doped spacers and method for forming the same | Hong-Nien Lin, Ming-Heng Tsai, Chun-Sheng Liang, Jeng-Ya David Yeh | 2021-03-30 |
| 10916546 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2021-02-09 |