Issued Patents 2021
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211477 | FinFETs having epitaxial capping layer on fin and methods for forming the same | Ming-Hua Yu, Chih-Pin Tsao | 2021-12-28 |
| 10978355 | Multi-gate devices with replaced-channels and methods for forming the same | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2021-04-13 |
| 10916546 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Yong-Yan Lu | 2021-02-09 |