Issued Patents 2021
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195946 | Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure | Romain Esteve, Roland Rupp | 2021-12-07 |
| 11177354 | Method of manufacturing silicon carbide semiconductor devices | Caspar Leendertz, Anton Mauder, Roland Rupp | 2021-11-16 |
| 11145745 | Method for producing a semiconductor component | Till Schloesser, Christian Kampen | 2021-10-12 |
| 11121220 | Semiconductor device including trench structures and manufacturing method | Caspar Leendertz, Anton Mauder, Roland Rupp | 2021-09-14 |
| 11069782 | Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device | Oliver Haeberlen | 2021-07-20 |
| 11031466 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more | 2021-06-08 |
| 11031494 | Silicon carbide semiconductor device having a gate electrode formed in a trench structure | — | 2021-06-08 |
| 11018244 | Lateral trench transistor device | Till Schloesser | 2021-05-25 |
| 11011606 | Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component | Caspar Leendertz, Anton Mauder | 2021-05-18 |
| 10985248 | SiC power semiconductor device with integrated Schottky junction | Caspar Leendertz, Romain Esteve, Anton Mauder, Bernd Zippelius | 2021-04-20 |
| 10985245 | Semiconductor device with planar field effect transistor cell | Christian Kampen | 2021-04-20 |
| 10964808 | Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure | Romain Esteve, Roland Rupp | 2021-03-30 |
| 10903322 | SiC power semiconductor device with integrated body diode | Caspar Leendertz, Anton Mauder | 2021-01-26 |
| 10903079 | Method for forming complementary doped semiconductor regions in a semiconductor body | Rolf Weis, Thomas R. Gross, Hermann Gruber, Franz Hirler, Markus Rochel +2 more | 2021-01-26 |