Issued Patents 2020
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10867651 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Guenole Jan, Jian Zhu | 2020-12-15 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2020-10-06 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2020-09-22 |
| 10763428 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Po-Kang Wang | 2020-09-01 |
| 10699765 | Methods and circuits for programming STT-MRAM cells for reducing back-hopping | Guenole Jan, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2020-06-30 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2020-05-19 |