Issued Patents 2020
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10867651 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Huanlong Liu, Jian Zhu | 2020-12-15 |
| 10868235 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Yu-Jen Wang, Ru-Ying Tong | 2020-12-15 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2020-10-06 |
| 10797225 | Dual magnetic tunnel junction (DMTJ) stack design | Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Sahil Patel, Ru-Ying Tong | 2020-10-06 |
| 10788561 | Method for measuring saturation magnetization of magnetic films and multilayer stacks | Santiago Serrano Guisan, Luc Thomas, Son Le | 2020-09-29 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Huanlong Liu, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2020-09-22 |
| 10763428 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2020-09-01 |
| 10761154 | Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices | Son Le, Luc Thomas, Santiago I. Serrano | 2020-09-01 |
| 10754000 | Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films | Santiago Serrano Guisan, Luc Thomas, Son Le | 2020-08-25 |
| 10699765 | Methods and circuits for programming STT-MRAM cells for reducing back-hopping | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2020-06-30 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Luc Thomas, Po-Kang Wang +2 more | 2020-05-19 |
| 10648069 | Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation | Sahil Patel, Yu-Jen Wang | 2020-05-12 |