Issued Patents 2020
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10868235 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Guenole Jan, Yu-Jen Wang | 2020-12-15 |
| 10797225 | Dual magnetic tunnel junction (DMTJ) stack design | Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel | 2020-10-06 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2020-10-06 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2020-09-22 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2020-05-19 |
| 10622047 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang | 2020-04-14 |