Issued Patents 2020
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10811110 | Method of reducing injection type of program disturb during program pre-charge in memory device | Wei Zhao, Henry Chin | 2020-10-20 |
| 10790003 | Maintaining channel pre-charge in program operation | Wei Zhao | 2020-09-29 |
| 10770157 | Method of reducing injection type of program disturb during program pre-charge in memory device | Wei Zhao, Henry Chin | 2020-09-08 |
| 10748627 | Reducing neighbor word line interference in a two-tier memory device by modifying word line programming order | Yingda Dong, Zhengyi Zhang | 2020-08-18 |
| 10685723 | Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line | Wei Zhao, Yingda Dong | 2020-06-16 |
| 10665306 | Memory device with discharge voltage pulse to reduce injection type of program disturb | Henry Chin | 2020-05-26 |
| 10665299 | Memory device with channel discharge before program-verify based on data state and sub-block position | Ching-Huang Lu | 2020-05-26 |
| 10636500 | Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge | Wei Zhao, Yingda Dong | 2020-04-28 |
| 10629272 | Two-stage ramp up of word line voltages in memory device to suppress read disturb | Ching-Huang Lu, Wei Zhao | 2020-04-21 |
| 10593411 | Memory device with charge isolation to reduce injection type of program disturb | Wei Zhao | 2020-03-17 |