WZ

Wei Zhao

ST Sandisk Technologies: 11 patents #14 of 425Top 4%
WT Western Digital Technologies: 2 patents #156 of 747Top 25%
Overall (2020): #4,813 of 565,922Top 1%
13
Patents 2020

Issued Patents 2020

Patent #TitleCo-InventorsDate
10811110 Method of reducing injection type of program disturb during program pre-charge in memory device Hong-Yan Chen, Henry Chin 2020-10-20
10790003 Maintaining channel pre-charge in program operation Hong-Yan Chen 2020-09-29
10770157 Method of reducing injection type of program disturb during program pre-charge in memory device Hong-Yan Chen, Henry Chin 2020-09-08
10726891 Reducing post-read disturb in a nonvolatile memory device Abhijith Prakash, Anubhav Khandelwal, Deepanshu Dutta, Huai-Yuan Tseng, Dengtao Zhao 2020-07-28
10685723 Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line Hong-Yan Chen, Yingda Dong 2020-06-16
10685978 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Ching-Huang Lu, Yanli Zhang, James Kai 2020-06-16
10685979 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Ching-Huang Lu, Yanli Zhang, James Kai 2020-06-16
10636494 Apparatus and method for reducing noise generated from locked out sense circuits in a non-volatile memory system Xiang Yang, Stanley Jeong, Huai-Yuan Tseng, Deepanshu Dutta 2020-04-28
10636488 Multi-sensing scan for cross-temperature mitigation Lei Lin, Henry Chin, Yingda Dong 2020-04-28
10636500 Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge Hong-Yan Chen, Yingda Dong 2020-04-28
10629272 Two-stage ramp up of word line voltages in memory device to suppress read disturb Ching-Huang Lu, Hong-Yan Chen 2020-04-21
10593411 Memory device with charge isolation to reduce injection type of program disturb Hong-Yan Chen 2020-03-17
10559370 System and method for in-situ programming and read operation adjustments in a non-volatile memory Xiang Yang, Piyush Dak, Huai-Yuan Tseng, Deepanshu Dutta, Mohan Dunga 2020-02-11