Issued Patents 2020
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10825897 | Formation of enhanced faceted raised source/drain EPI material for transistor devices | George R. Mulfinger, Hui Zang, Liu Jiang, Zhenyu Hu | 2020-11-03 |
| 10811422 | Semiconductor recess to epitaxial regions and related integrated circuit structure | Yanping Shen, Hui Zang, David Paul Brunco | 2020-10-20 |
| 10784342 | Single diffusion breaks formed with liner protection for source and drain regions | Hong Yu, Jianwei Peng, Hui Zhan | 2020-09-22 |
| 10777642 | Formation of enhanced faceted raised source/drain epi material for transistor devices | George R. Mulfinger, Hui Zang, Liu Jiang, Zhenyu Hu | 2020-09-15 |
| 10756184 | Faceted epitaxial source/drain regions | George R. Mulfinger, Timothy J. McArdle, Judson R. Holt, Steffen Sichler, Omur Isil Aydin +3 more | 2020-08-25 |
| 10714577 | Etch stop layer for use in forming contacts that extend to multiple depths | Hui Zang, Hsien-Ching Lo | 2020-07-14 |
| 10700173 | FinFET device with a wrap-around silicide source/drain contact structure | Yi Qi, Hsien-Ching Lo, Hong Yu, Yanping Shen, Xing Zhang +4 more | 2020-06-30 |
| 10636894 | Fin-type transistors with spacers on the gates | Yanping Shen, Hui Zang, Hsien-Ching Lo, Qun Gao, Jerome Ciavatti +4 more | 2020-04-28 |
| 10546775 | Field-effect transistors with improved dielectric gap fill | Liu Jiang, Yongjun Shi, Yi Qi, Hsien-Ching Lo, Hui Zang | 2020-01-28 |