| 10861861 |
Memory including a perovskite material |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri E. Nikonov, Sou-Chi Chang +1 more |
2020-12-08 |
| 10832761 |
Polarization gate stack SRAM |
Daniel H. Morris, Ian A. Young |
2020-11-10 |
| 10777250 |
Save-restore circuitry with metal-ferroelectric-metal devices |
Kaushik Vaidyanathan, Daniel H. Morris, Huichu Liu, Dileep J. Kurian, Tanay Karnik +1 more |
2020-09-15 |
| 10734378 |
Transistor threshold voltage variation optimization |
Daniel H. Morris, Ian A. Young |
2020-08-04 |
| 10720434 |
Floating body memory cell having gates favoring different conductivity type regions |
Peter L. D. Chang, David L. Kencke, Ibrahim Ban |
2020-07-21 |
| 10720438 |
Memory array with ferroelectric elements |
Daniel H. Morris, Ian A. Young |
2020-07-21 |
| 10720504 |
Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode |
Daniel H. Morris, Ian A. Young |
2020-07-21 |
| 10707846 |
Tunnel field-effect transistor (TFET) based high-density and low-power sequential |
Daniel H. Morris, Ian A. Young |
2020-07-07 |
| 10651182 |
Three-dimensional ferroelectric NOR-type memory |
Daniel H. Morris, Ian A. Young |
2020-05-12 |
| 10573385 |
Ferroelectric based memory cell with non-volatile retention |
Daniel H. Morris, Ian A. Young |
2020-02-25 |
| 10559349 |
Polarization gate stack SRAM |
Daniel H. Morris, Ian A. Young |
2020-02-11 |
| 10553694 |
Transistors with temperature compensating gate structures |
Daniel H. Morris, Ian A. Young |
2020-02-04 |
| 10535770 |
Scaled TFET transistor formed using nanowire with surface termination |
Rafael Rios, Kelin J. Kuhn, Ian A. Young, Justin R. Weber |
2020-01-14 |