Issued Patents 2020
Showing 26–41 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10629676 | Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device | Johannes Georg Laven, Maria Cotorogea, Haybat Itani, Erich Griebl, Andreas Haghofer | 2020-04-21 |
| 10622268 | Apparatus and method for ion implantation | Johannes Georg Laven, Moriz Jelinek, Werner Schustereder | 2020-04-14 |
| 10615039 | Semiconductor device having a device doping region of an electrical device arrangement | Johannes Georg Laven, Werner Schustereder | 2020-04-07 |
| 10607839 | Method of reducing an impurity concentration in a semiconductor body | Peter Irsigler, Thomas Wuebben | 2020-03-31 |
| 10580653 | Method of forming a semiconductor device | Franz-Josef Niedernostheide, Johannes Georg Laven | 2020-03-03 |
| 10566198 | Doping method | Johannes Baumgartl, Helmut Oefner | 2020-02-18 |
| 10566462 | Bipolar semiconductor device and manufacturing method | Frank Pfirsch, Franz-Josef Niedernostheide | 2020-02-18 |
| 10566426 | Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer | Anton Mauder, Oliver Hellmund, Peter Irsigler, Jens Peter Konrath, David Laforet +5 more | 2020-02-18 |
| 10566424 | Semiconductor device, silicon wafer and method of manufacturing a silicon wafer | Nico Caspary, Helmut Oefner | 2020-02-18 |
| 10553675 | Isolation of semiconductor device with buried cavity | Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Andreas Meiser +2 more | 2020-02-04 |
| 10546939 | N-channel bipolar power semiconductor device with P-layer in the drift volume | Roman Baburske, Markus Bina, Oana Julia Spulber | 2020-01-28 |
| 10541301 | SiC-based superjunction semiconductor device | Wolfgang Jantscher, Roland Rupp, Werner Schustereder, Hans Weber | 2020-01-21 |
| 10535743 | Metallization and its use in, in particular, an IGBT or a diode | Frank Hille | 2020-01-14 |
| 10535553 | Devices with backside metal structures and methods of formation thereof | Oliver Hellmund, Ingo Muri, Johannes Baumgartl, Iris Moder, Thomas Neidhart | 2020-01-14 |
| 10529838 | Semiconductor device having a variable carbon concentration | Moriz Jelinek, Johannes Georg Laven, Helmut Oefner, Werner Schustereder | 2020-01-07 |
| 10529809 | Method of manufacturing a power semiconductor device | Matthias Kuenle, Daniel Schloegl, Christoph Weiss | 2020-01-07 |