Issued Patents 2020
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10868172 | Vertical power devices with oxygen inserted Si-layers | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase +2 more | 2020-12-15 |
| 10868146 | Method for producing a semiconductor device having a superjunction structure, first and second trenches and a trench structure in the second trench | Till Schloesser | 2020-12-15 |
| 10845428 | Method and circuit for detecting a loss of a bondwire in a power switch | Benno Koeppl, Marcus Nuebling, Markus Zannoth, Alexander Mayer | 2020-11-24 |
| 10790353 | Semiconductor device with superjunction and oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi +2 more | 2020-09-29 |
| 10741638 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more | 2020-08-11 |
| 10734484 | Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions | Anton Mauder, Roland Rupp, Oana Julia Spulber | 2020-08-04 |
| 10700061 | Semiconductor device comprising a first transistor and a second transistor | Dirk Ahlers, Till Schloesser | 2020-06-30 |
| 10629690 | Semiconductor device comprising a transistor including a first field plate and a second field plate | Franz Hirler, Till Schloesser | 2020-04-21 |
| 10586851 | Silicon carbide semiconductor device and method of manufacturing | Caspar Leendertz, Anton Mauder, Roland Rupp | 2020-03-10 |
| 10582580 | Switch comprising a field effect transistor and integrated circuit | Till Schloesser | 2020-03-03 |
| 10580888 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase +2 more | 2020-03-03 |
| 10553675 | Isolation of semiconductor device with buried cavity | Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Hans-Joachim Schulze +2 more | 2020-02-04 |
| 10546920 | Semiconductor device having a buried layer | Ralf Rudolf | 2020-01-28 |