| 10811304 |
Increased isolation of diffusion breaks in FinFET devices using an angled etch |
Min Gyu Sung |
2020-10-20 |
| 10763155 |
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions |
Gurtej S. Sandhu, Scott L. Light, John Smythe |
2020-09-01 |
| 10720357 |
Method of forming transistor device having fin cut regions |
Min Gyu Sung, Naushad K. Variam, Johannes M. van Meer, Jae-Young Lee, Jun Seok Lee |
2020-07-21 |
| 10692775 |
Fin damage reduction during punch through implantation of FinFET device |
Min Gyu Sung, Jae-Young Lee, Johannes M. van Meer, Naushad K. Variam |
2020-06-23 |
| 10692872 |
Device structure for forming semiconductor device having angled contacts |
Anthony Renau, Morgan Evans, John Hautala, Joe Olson |
2020-06-23 |
| 10685865 |
Method and device for power rail in a fin type field effect transistor |
Min Gyu Sung, Johannes M. van Meer, John Hautala |
2020-06-16 |
| 10686033 |
Fin damage reduction during punch through implantation of FinFET device |
Min Gyu Sung, Jae-Young Lee, Johannes M. van Meer, Naushad K. Variam |
2020-06-16 |
| 10644117 |
Techniques for contact formation in self-aligned replacement gate device |
Min Gyu Sung, Wenhui Wang, Jun Seok Lee |
2020-05-05 |
| 10629437 |
Techniques and structure for forming dynamic random-access device using angled ions |
John Hautala, Steven R. Sherman, Rajesh Prasad, Min Gyu Sung |
2020-04-21 |
| 10615069 |
Semiconductor structures comprising polymeric materials |
— |
2020-04-07 |
| 10607847 |
Gate all around device and method of formation using angled ions |
Min Gyu Sung, Anthony Renau, Morgan Evans, Joseph C. Olson |
2020-03-31 |
| 10607999 |
Techniques and structure for forming dynamic random access device |
Naushad K. Variam |
2020-03-31 |
| 10580651 |
Integration of device regions |
Min Gyu Sung |
2020-03-03 |
