Issued Patents 2019
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522680 | Finfet semiconductor device structure with capped source drain structures | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10522642 | Semiconductor device with air-spacer | Feng-Cheng Yang, Chung-Te Lin, Yen-Ming Chen | 2019-12-31 |
| 10522420 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10497628 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-03 |
| 10453753 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2019-10-22 |
| 10403551 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-09-03 |
| 10396156 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Kuo-Feng Yu +2 more | 2019-08-27 |
| 10374055 | Buffer layer on semiconductor devices | Cheng-Hao Hou, Xiong-Fei Yu, Kuang-Yuan Hsu | 2019-08-06 |
| 10217815 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Yen-Ming Chen, Feng-Cheng Yang | 2019-02-26 |