Issued Patents 2019
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522641 | Gate spacer and methods of forming | Chun Hsiung Tsai | 2019-12-31 |
| 10522356 | Methods and systems for dopant activation using microwave radiation | Chun Hsiung Tsai, Huai-Tei Yang, Kei-Wei Chen | 2019-12-31 |
| 10468500 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Yin-Pin Wang, Da-Wen Lin, Jian-Hao Chen +1 more | 2019-11-05 |
| 10431670 | Source and drain formation technique for fin-like field effect transistor | Chun Hsiung Tsai, Ziwei Fang | 2019-10-01 |
| 10396156 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee +2 more | 2019-08-27 |
| 10361279 | Method for manufacturing FinFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang | 2019-07-23 |
| 10296032 | Bandgap reference circuit | Jaw-Juinn Horng, Chung-Hui Chen | 2019-05-21 |
| 10276715 | Fin field effect transistor and method for fabricating the same | Chun Hsiung Tsai, Chien-Tai Chan, Kei-Wei Chen | 2019-04-30 |