Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522641 | Gate spacer and methods of forming | Kuo-Feng Yu | 2019-12-31 |
| 10522424 | FinFET doping methods and structures thereof | Wei-Yuan Lu | 2019-12-31 |
| 10522356 | Methods and systems for dopant activation using microwave radiation | Huai-Tei Yang, Kuo-Feng Yu, Kei-Wei Chen | 2019-12-31 |
| 10515846 | Systems and methods for a semiconductor structure having multiple semiconductor-device layers | Yi-Tang Lin, Clement Hsingjen Wann | 2019-12-24 |
| 10468500 | FinFET fabrication methods | Cheng-Yi Peng, Yin-Pin Wang, Kuo-Feng Yu, Da-Wen Lin, Jian-Hao Chen +1 more | 2019-11-05 |
| 10453716 | Systems and methods for annealing semiconductor structures | Zi-Wei Fang, Chao-Hsiung Wang | 2019-10-22 |
| 10431670 | Source and drain formation technique for fin-like field effect transistor | Kuo-Feng Yu, Ziwei Fang | 2019-10-01 |
| 10396156 | Method for FinFET LDD doping | Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee, Kuo-Feng Yu +2 more | 2019-08-27 |
| 10361279 | Method for manufacturing FinFET structure with doped region | Shahaji B. More, Cheng-Yi Peng, Shih-Chieh Chang, Kuo-Feng Yu | 2019-07-23 |
| 10340269 | Contact resistance reduction technique | Ming-Te Chen | 2019-07-02 |
| 10297492 | Mechanism for FinFET well doping | Yan-Ting Lin, Clement Hsingjen Wann | 2019-05-21 |
| 10276715 | Fin field effect transistor and method for fabricating the same | Chien-Tai Chan, Kuo-Feng Yu, Kei-Wei Chen | 2019-04-30 |
| 10269577 | Semiconductor devices and methods for manufacturing the same | Tsz-Mei Kwok | 2019-04-23 |
| 10263108 | Metal-insensitive epitaxy formation | Yuan-Ko Hwang | 2019-04-16 |