Issued Patents 2019
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522420 | Source/drain features with an etch stop layer | Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10522680 | Finfet semiconductor device structure with capped source drain structures | Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10497628 | Methods of forming epitaxial structures in fin-like field effect transistors | Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-03 |
| 10403551 | Source/drain features with an etch stop layer | Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2019-09-03 |
| 10217815 | Integrated circuit device with source/drain barrier | Wei-Yang Lee, Yen-Ming Chen, Feng-Cheng Yang | 2019-02-26 |