Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522680 | Finfet semiconductor device structure with capped source drain structures | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-12-31 |
| 10522642 | Semiconductor device with air-spacer | Wei-Yang Lee, Chung-Te Lin, Yen-Ming Chen | 2019-12-31 |
| 10522420 | Source/drain features with an etch stop layer | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-12-31 |
| 10497628 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-12-03 |
| 10483266 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2019-11-19 |
| 10453753 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Wei-Yang Lee, Yen-Ming Chen | 2019-10-22 |
| 10453501 | Hybrid LPDDR4-DRAM with cached NVM and flash-NAND in multi-chip packages for mobile devices | Xiaobing Lee, Yu Meng, Yunxiang Wu | 2019-10-22 |
| 10403551 | Source/drain features with an etch stop layer | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-09-03 |
| 10283624 | Semiconductor structure and method for forming the same | Kai-Hsuan Lee, Bo-Yu Lai, Chi On Chui, Cheng-Yu Yang, Yen-Ting Chen +2 more | 2019-05-07 |
| 10276691 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Yen-Ming Chen | 2019-04-30 |
| 10269935 | Semiconductor device including Fin-PET and manufacturing method thereof | Gin-Chen Huang, Tzu-Hsiang Hsu, Chia-Jung Hsu, Teng-Chun Tsai | 2019-04-23 |
| 10217815 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-02-26 |