Issued Patents 2019
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510953 | Top electrode for device structures in interconnect | Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chin-Chieh Yang, Yu-Wen Liao +2 more | 2019-12-17 |
| 10504963 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Wen-Ting Chu, Yu-Wen Liao | 2019-12-10 |
| 10475852 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao | 2019-11-12 |
| 10475999 | Metal landing on top electrode of RRAM | Wen-Ting Chu | 2019-11-12 |
| 10388868 | Resistance variable memory structure and method of forming the same | Kuo-Chi Tu, Hsia-Wei Chen, Chin-Chieh Yang, Sheng-Hung Shih, Wen-Chun You +2 more | 2019-08-20 |
| 10311952 | Method and apparatus for reading RRAM cell | Chin-Chieh Yang, Chang-Sheng Liao, Hsia-Wei Chen, Jen-Sheng Yang, Kuo-Chi Tu +4 more | 2019-06-04 |
| 10276790 | Top electrode for device structures in interconnect | Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chin-Chieh Yang, Yu-Wen Liao +2 more | 2019-04-30 |
| 10262731 | Device and method for forming resistive random access memory cell | Wen-Ting Chu, Yu-Wei Ting, Chun-Yang Tsai, Kuo-Ching Huang | 2019-04-16 |
| 10199575 | RRAM cell structure with laterally offset BEVA/TEVA | Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen, Chin-Chieh Yang +2 more | 2019-02-05 |