Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522634 | Finfet with self-aligned source/drain | Yi-Jyun Huang, Tung-Heng Hsieh | 2019-12-31 |
| 10515957 | Semiconductor device having fins | Chia-Sheng Fan, Tung-Heng Hsieh | 2019-12-24 |
| 10515850 | Method and IC design with non-linear power rails | Sheng-Hsiung Wang, Tung-Heng Hsieh | 2019-12-24 |
| 10453837 | System and method of fabricating ESD finFET with improved metal landing in the drain | Tzung-Chi Lee, Tung-Heng Hsieh, Yung Feng Chang | 2019-10-22 |
| 10418361 | Circuit incorporating multiple gate stack compositions | Po-Nien Chen, Chi-Hsun Hsieh, Harry-Hak-Lay Chuang, Wei-Cheng Wu, Eric Huang | 2019-09-17 |
| 10403736 | Polysilicon design for replacement gate technology | Harry-Hak-Lay Chuang, Kong-Beng Thei, Sheng-Chen Chung, Chiung-Han Yeh, Lee-Wee Teo +1 more | 2019-09-03 |
| 10388531 | Self-aligned insulated film for high-k metal gate device | Jin-Aun Ng, Harry-Hak-Lay Chuang, Maxi Chang, Chih-Tang Peng, Chih-Yang Yeh +8 more | 2019-08-20 |
| 10354997 | Method for manufacturing semiconductor device with replacement gates | Chia-Sheng Fan, Tung-Heng Hsieh | 2019-07-16 |
| 10340348 | Method of manufacturing finFETs with self-align contacts | Yi-Jyun Huang, Tung-Heng Hsieh | 2019-07-02 |
| 10276559 | System and method of fabricating ESD FinFET with improved metal landing in the drain | Tzung-Chi Lee, Tung-Heng Hsieh, Yung Feng Chang | 2019-04-30 |
| 10276447 | Semiconductor structures and methods of forming the same | Harry-Hak-Lay Chuang, Po-Nien Chen | 2019-04-30 |
| 10276445 | Leakage reduction methods and structures thereof | Chia-Sheng Fan, Chun-Yen Lin, Tung-Heng Hsieh | 2019-04-30 |
| 10236220 | Fin field-effect transistor device and method | Ming-Ching Chang, Yu-Chao Lin | 2019-03-19 |
| 10204202 | Dummy fin cell placement in an integrated circuit layout | Tung-Heng Hsieh, Yu-Jung Chang, Tzung-Chi Lee | 2019-02-12 |