| 10522342 |
Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer |
Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2019-12-31 |
| 10395922 |
Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer |
Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2019-08-27 |
| 10367062 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices |
Michael A. Guillorn, Nicolas Loubet |
2019-07-30 |
| 10366892 |
Hybrid III-V technology to support multiple supply voltages and off state currents on same chip |
Josephine B. Chang, Amlan Majumdar, Jeffrey W. Sleight |
2019-07-30 |
| 10361219 |
Implementing a hybrid finFET device and nanowire device utilizing selective SGOI |
Josephine B. Chang, Leland Chang, Jeffrey W. Sleight |
2019-07-23 |
| 10361304 |
Fabrication of a strained region on a substrate |
Jiaxing Liu, Renee T. Mo |
2019-07-23 |
| 10354960 |
Support for long channel length nanowire transistors |
Karthik Balakrishnan, Tenko Yamashita, Jeffrey W. Sleight |
2019-07-16 |
| 10325983 |
Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs |
Josephine B. Chang, Michael A. Guillorn, Xin Miao |
2019-06-18 |
| 10217817 |
Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs |
Josephine B. Chang, Michael A. Guillorn, Xin Miao |
2019-02-26 |
| 10170634 |
Wire-last gate-all-around nanowire FET |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2019-01-01 |
| 10170609 |
Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET |
Szu-Lin Cheng, Michael A. Guillorn, Gen P. Lauer |
2019-01-01 |
| 10170608 |
Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
Szu-Lin Cheng, Michael A. Guillorn, Gen P. Lauer |
2019-01-01 |
| 10170636 |
Gate-to-bulk substrate isolation in gate-all-around devices |
Josephine B. Chang, Michael A. Guillorn, Xin Miao |
2019-01-01 |
| 10170552 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices |
Michael A. Guillorn, Nicolas Loubet |
2019-01-01 |
