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Fully-depleted silicon-on-insulator transistors |
Horacio Josue Mendez |
2018-12-25 |
| 10153291 |
Lateral non-volatile storage cell |
John Bradley Deforge, John J. Ellis-Monaghan, Kirk D. Peterson |
2018-12-11 |
| 10134760 |
FinFETs with various fin height |
Kangguo Cheng, Xin Miao, Balasubramanian Pranatharthiharan |
2018-11-20 |
| 10128347 |
Gate-all-around field effect transistor having multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn, Robert R. Robison, Reinaldo Vega, Tenko Yamashita |
2018-11-13 |
| 10128377 |
Independent gate FinFET with backside gate contact |
Joshua M. Rubin, Tenko Yamashita |
2018-11-13 |
| 10121877 |
Vertical field effect transistor with metallic bottom region |
Joshua M. Rubin, Tenko Yamashita |
2018-11-06 |
| 10109639 |
Lateral non-volatile storage cell |
John Bradley Deforge, John J. Ellis-Monaghan, Kirk D. Peterson |
2018-10-23 |
| 10090330 |
Structure and method for fully depleted silicon on insulator structure for threshold voltage modification |
John J. Ellis-Monaghan, Kirk D. Peterson |
2018-10-02 |
| 10038083 |
Semiconductor device with low band-to-band tunneling |
Nicolas Degors |
2018-07-31 |
| 10002800 |
Prevention of charging damage in full-depletion devices |
— |
2018-06-19 |
| 9997607 |
Mirrored contact CMOS with self-aligned source, drain, and back-gate |
Joshua M. Rubin, Tenko Yamashita |
2018-06-12 |
| 9997539 |
Fully-depleted silicon-on-insulator transistors |
Horacio Josue Mendez |
2018-06-12 |
| 9991339 |
Bulk to silicon on insulator device |
Joshua M. Rubin, Tenko Yamashita |
2018-06-05 |
| 9990459 |
Checking wafer-level integrated designs for antenna rule compliance |
Larry Wissel |
2018-06-05 |
| 9984883 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2018-05-29 |
| 9985099 |
Semiconductor device with low band-to-band tunneling |
Nicolas Degors |
2018-05-29 |
| 9978871 |
Bulk to silicon on insulator device |
Joshua M. Rubin, Tenko Yamashita |
2018-05-22 |
| 9972497 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2018-05-15 |
| 9947593 |
Extra gate device for nanosheet |
Bruce B. Doris, Junli Wang |
2018-04-17 |
| 9947743 |
Structures and methods for long-channel devices in nanosheet technology |
Bruce B. Doris |
2018-04-17 |
| 9947664 |
Semiconductor device and method of forming the semiconductor device |
Brent A. Anderson, Shawn P. Fetterolf |
2018-04-17 |
| 9941300 |
Structure and method for fully depleted silicon on insulator structure for threshold voltage modification |
John J. Ellis-Monaghan, Kirk D. Peterson |
2018-04-10 |
| 9929145 |
Bipolar transistor compatible with vertical FET fabrication |
Brent A. Anderson, Kangguo Cheng, Tak H. Ning |
2018-03-27 |
| 9881925 |
Mirror contact capacitor |
Joshua M. Rubin, Tenko Yamashita |
2018-01-30 |
| 9859172 |
Bipolar transistor compatible with vertical FET fabrication |
Brent A. Anderson, Kangguo Cheng, Tak H. Ning |
2018-01-02 |
