ST

Sean Teehan

IBM: 15 patents #247 of 10,623Top 3%
Overall (2018): #2,612 of 503,207Top 1%
15
Patents 2018

Issued Patents 2018

Patent #TitleCo-InventorsDate
10141230 Method and structure to enable dual channel Fin critical dimension control Marc A. Bergendahl, Kangguo Cheng, John R. Sporre 2018-11-27
10141445 Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre 2018-11-27
10083962 Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition Kangguo Cheng, Fee Li Lie, Eric R. Miller 2018-09-25
10074730 Forming stacked nanowire semiconductor device Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +1 more 2018-09-11
10043801 Air gap spacer for metal gates Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre 2018-08-07
10026615 Fin patterns with varying spacing without Fin cut Marc A. Bergendahl, Kangguo Cheng, John R. Sporre 2018-07-17
10014391 Vertical transport field effect transistor with precise gate length definition Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre 2018-07-03
9997369 Margin for fin cut using self-aligned triple patterning Gauri Karve, Fee Li Lie, Eric R. Miller, Stuart A. Sieg, John R. Sporre 2018-06-12
9991117 Fin patterns with varying spacing without fin cut Marc A. Bergendahl, Kangguo Cheng, John R. Sporre 2018-06-05
9985138 Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre 2018-05-29
9984877 Fin patterns with varying spacing without fin cut Marc A. Bergendahl, Kangguo Cheng, John R. Sporre 2018-05-29
9953915 Electrically conductive interconnect including via having increased contact surface area Hsueh-Chung Chen, James J. Demarest, Chih-Chao Yang 2018-04-24
9917196 Semiconductor device and method of forming the semiconductor device Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more 2018-03-13
9905643 Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre 2018-02-27
9893166 Dummy gate formation using spacer pull down hardmask Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre 2018-02-13