Issued Patents 2017
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847334 | Structure and formation method of semiconductor device with channel layer | Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang | 2017-12-19 |
| 9761666 | Strained channel field effect transistor | Mark van Dal, Gerben Doornbos, Georgios Vellianitis, Feng Yuan | 2017-09-12 |
| 9728461 | Method of forming semiconductor device with different threshold voltages | Cheng-Yi Peng, Chia-Cheng Ho, Chih Chieh Yeh, Yu-Lin Yang | 2017-08-08 |
| 9721829 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Feng Yuan, Chih Chieh Yeh | 2017-08-01 |
| 9711412 | FinFETs with different fin heights | Chih Chieh Yeh, Chang-Yun Chang, Feng Yuan | 2017-07-18 |
| 9659826 | Asymmetric source/drain depths | Cheng-Yi Peng, Yu-Lin Yang, Chia-Cheng Ho, Jung-Piao Chiu, Chih Chieh Yeh +2 more | 2017-05-23 |
| 9647071 | FINFET structures and methods of forming the same | Cheng-Yi Peng, Chih Chieh Yeh | 2017-05-09 |
| 9640441 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Chih Chieh Yeh | 2017-05-02 |
| 9601587 | Semiconductor device having elevated structure | Sey-Ping Sun, Chin-Hsiang Lin, Chih-Hao Chang, Chen-Nan Yeh, Chao-An Jong | 2017-03-21 |
| 9577071 | Method of making a strained structure of a semiconductor device | Chih Chieh Yeh, Feng Yuan, Cheng-Yi Peng, Clement Hsingjen Wann | 2017-02-21 |
| 9564529 | Method for fabricating a strained structure and structure formed | Chih-Hao Chang, Chih-Hsin Ko, Feng Yuan, Jeff J. Xu | 2017-02-07 |
| 9558650 | Surveillance method, surveillance apparatus, and marking module | Yu-Chin Chou, Wei-Hsiao Wang, Hsin-Yen Lee, Jui-Hsuan Chiang, Chih-Hsin Tsao | 2017-01-31 |