Issued Patents 2017
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9831322 | Channel epitaxial regrowth flow (CRF) | Ching-Feng Fu, Shih-Ting Hung, Hsin-Chih Chen, Chih-Hsin Ko | 2017-11-28 |
| 9812551 | Method of forming the gate electrode of field effect transistor | Neng-Kuo Chen, Yi-An Lin, Chun-Wei Chang, Sey-Ping Sun | 2017-11-07 |
| 9786543 | Isolation structure of semiconductor device | Shu-Han Chen, Cheng-Hsien Wu, Chih-Hsin Ko | 2017-10-10 |
| 9780174 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko | 2017-10-03 |
| 9780216 | Combination FinFET and methods of forming same | Yu-Lien Huang, Tsu-Hsiu Perng, Tung Ying Lee, Ming-Huan Tsai | 2017-10-03 |
| 9773809 | Systems and methods for a semiconductor structure having multiple semiconductor-device layers | Yi-Tang Lin, Chun Hsiung Tsai | 2017-09-26 |
| 9773889 | Method of semiconductor arrangement formation | Wei-Chieh Chen, Hao-Hsiung Lin, Shu-Han Chen, You-Ru Lin, Cheng-Hsien Wu +1 more | 2017-09-26 |
| 9768305 | Gradient ternary or quaternary multiple-gate transistor | Chih-Hsin Ko | 2017-09-19 |
| 9748388 | Method of forming strained structures of semiconductor devices | Cheng-Hsien Wu, Chih-Hsin Ko | 2017-08-29 |
| 9748143 | FinFETs with strained well regions | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko | 2017-08-29 |
| 9698060 | Germanium FinFETs with metal gates and stressors | Chih Chieh Yeh, Chih-Sheng Chang | 2017-07-04 |
| 9673292 | Semiconductor device having modified profile metal gate | Yu-Lien Huang, Chi-Wen Liu, Ming-Huan Tsai, Zhao-Cheng Chen | 2017-06-06 |
| 9646872 | Systems and methods for a semiconductor structure having multiple semiconductor-device layers | Yi-Tang Lin, Chun Hsiung Tsai | 2017-05-09 |
| 9634001 | System and methods for converting planar design to FinFET design | Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh, Ting-Chu Ko, Chung-Hsien Chen | 2017-04-25 |
| 9627539 | Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost | Yu-Lien Huang, Ming-Huan Tsai | 2017-04-18 |
| 9627280 | Methods for probing semiconductor fins through four-point probe and determining carrier concentrations | Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan Shao, Wei-Chun Tsai | 2017-04-18 |
| 9607826 | Semiconductor device manufacturing methods and methods of forming insulating material layers | Gin-Chen Huang, Tsai-Fu Hsiao, Ching-Hong Jiang, Neng-Kuo Chen, Hongfa Luan +1 more | 2017-03-28 |
| 9601594 | Semiconductor device with enhanced strain | Cheng-Hsien Wu, Chih-Hsin Ko | 2017-03-21 |
| 9601342 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Chih-Hsin Ko | 2017-03-21 |
| 9601328 | Growing a III-V layer on silicon using aligned nano-scale patterns | Chih-Hsin Ko | 2017-03-21 |
| 9595614 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Cheng-Hsien Wu, Chih-Hsin Ko | 2017-03-14 |
| 9589803 | Gate electrode of field effect transistor | Neng-Kuo Chen, Yi-An Lin, Chun-Wei Chang, Sey-Ping Sun | 2017-03-07 |
| 9590068 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Chih-Hsin Ko | 2017-03-07 |
| 9589838 | Contact structure of semiconductor device | Sung-Li Wang, Ding-Kang Shih, Chin-Hsiang Lin, Sey-Ping Sun | 2017-03-07 |
| 9583379 | Inverted trapezoidal recess for epitaxial growth | Chih-Hsin Ko, Cheng-Hsien Wu | 2017-02-28 |