Issued Patents 2017
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9831322 | Channel epitaxial regrowth flow (CRF) | Ching-Feng Fu, Shih-Ting Hung, Hsin-Chih Chen, Clement Hsingjen Wann | 2017-11-28 |
| 9786543 | Isolation structure of semiconductor device | Shu-Han Chen, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-10-10 |
| 9780174 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-10-03 |
| 9773889 | Method of semiconductor arrangement formation | Wei-Chieh Chen, Hao-Hsiung Lin, Shu-Han Chen, You-Ru Lin, Cheng-Hsien Wu +1 more | 2017-09-26 |
| 9768305 | Gradient ternary or quaternary multiple-gate transistor | Clement Hsingjen Wann | 2017-09-19 |
| 9748388 | Method of forming strained structures of semiconductor devices | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-08-29 |
| 9748143 | FinFETs with strained well regions | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-08-29 |
| 9722051 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2017-08-01 |
| 9673105 | CMOS devices with Schottky source and drain regions | Hung-Wei Chen, Chung-Hu Ke, Wen-Chin Lee | 2017-06-06 |
| 9659780 | Multiple gate field-effect transistors having oxygen-scavenged gate stack | Yee-Chia Yeo, Chih Chieh Yeh, Cheng-Hsien Wu, Liang-Yin Chen, Xiong-Fei Yu +2 more | 2017-05-23 |
| 9601594 | Semiconductor device with enhanced strain | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-21 |
| 9601328 | Growing a III-V layer on silicon using aligned nano-scale patterns | Clement Hsingjen Wann | 2017-03-21 |
| 9601342 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-21 |
| 9595614 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-14 |
| 9590068 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Clement Hsingjen Wann | 2017-03-07 |
| 9583379 | Inverted trapezoidal recess for epitaxial growth | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-02-28 |
| 9564529 | Method for fabricating a strained structure and structure formed | Tsung-Lin Lee, Chih-Hao Chang, Feng Yuan, Jeff J. Xu | 2017-02-07 |
| 9564489 | Multiple gate field-effect transistors having oxygen-scavenged gate stack | Yee-Chia Yeo, Chih Chieh Yeh, Cheng-Hsien Wu, Liang-Yin Chen, Xiong-Fei Yu +2 more | 2017-02-07 |
| 9559099 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2017-01-31 |
| 9553012 | Semiconductor structure and the manufacturing method thereof | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-24 |
| 9553149 | Semiconductor device with a strained region and method of making | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-24 |
| 9548303 | FinFET devices with unique fin shape and the fabrication thereof | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-17 |