| 9847293 |
Utilization of backside silicidation to form dual side contacted capacitor |
Sinan Goktepeli, Plamen Vassilev Kolev, Richard Hammond, Shiqun Gu, Steve Fanelli |
2017-12-19 |
| 9786613 |
EMI shield for high frequency layer transferred devices |
— |
2017-10-10 |
| 9783414 |
Forming semiconductor structure with device layers and TRL |
— |
2017-10-10 |
| 9780775 |
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George Imthurn, Mark L. Burgener |
2017-10-03 |
| 9780117 |
Semiconductor structure with active device and damaged region |
Paul A. Nygaard |
2017-10-03 |
| 9754860 |
Redistribution layer contacting first wafer through second wafer |
Stuart B. Molin, Mark Drucker |
2017-09-05 |
| 9748272 |
Semiconductor-on-insulator with back side strain inducing material |
Paul A. Nygaard, Stuart B. Molin |
2017-08-29 |
| 9673219 |
Vertical semiconductor device with thinned substrate |
Stuart B. Molin |
2017-06-06 |
| 9647209 |
Integrated phase change switch |
Sinan Goktepeli |
2017-05-09 |
| 9624096 |
Forming semiconductor structure with device layers and TRL |
— |
2017-04-18 |
| 9608619 |
Method and apparatus improving gate oxide reliability by controlling accumulated charge |
Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George Imthurn, Robert B. Welstand +3 more |
2017-03-28 |
| 9576937 |
Back-to-back stacked integrated circuit assembly |
Stuart B. Molin |
2017-02-21 |
| 9570558 |
Trap rich layer for semiconductor devices |
Christopher N. Brindle, Stuart B. Molin |
2017-02-14 |
| 9558951 |
Trap rich layer with through-silicon-vias in semiconductor devices |
Anton Arriagada, Chris Brindle |
2017-01-31 |
| 9553013 |
Semiconductor structure with TRL and handle wafer cavities |
George Imthurn |
2017-01-24 |