| 9847293 |
Utilization of backside silicidation to form dual side contacted capacitor |
Plamen Vassilev Kolev, Michael A. Stuber, Richard Hammond, Shiqun Gu, Steve Fanelli |
2017-12-19 |
| 9837412 |
S-contact for SOI |
Befruz Tasbas, Simon Edward Willard, Alain Duvallet |
2017-12-05 |
| 9837302 |
Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer |
Stephen Alan FANELLI |
2017-12-05 |
| 9824915 |
Structure for radiofrequency applications and process for manufacturing such a structure |
Bich-Yen Nguyen, Christophe Maleville, Anthony Mark Miscione, Alain Duvallet |
2017-11-21 |
| 9812580 |
Deep trench active device with backside body contact |
Steve Fanelli |
2017-11-07 |
| 9780210 |
Backside semiconductor growth |
Richard Hammond |
2017-10-03 |
| 9755029 |
Switch device performance improvement through multisided biased shielding |
— |
2017-09-05 |
| 9704738 |
Bulk layer transfer wafer with multiple etch stop layers |
— |
2017-07-11 |
| 9647209 |
Integrated phase change switch |
Michael A. Stuber |
2017-05-09 |