| 9852984 |
Cut first alternative for 2D self-aligned via |
Guillaume Bouche, Sudharshanan Raghunathan |
2017-12-26 |
| 9842801 |
Self-aligned via and air gap |
Mark A. Zaleski |
2017-12-12 |
| 9825031 |
Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices |
Guillaume Bouche, Jason E. Stephens, David Permana, Jagannathan Vasudevan |
2017-11-21 |
| 9735154 |
Semiconductor structure having gap fill dielectric layer disposed between fins |
Dae-Han Choi, Dae Geun Yang, Xiang Hu, Mariappan Hariharaputhiran |
2017-08-15 |
| 9704973 |
Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins |
Ruilong Xie |
2017-07-11 |
| 9679805 |
Self-aligned back end of line cut |
Guillaume Bouche, Mark A. Zaleski |
2017-06-13 |
| 9666717 |
Split well zero threshold voltage field effect transistor for integrated circuits |
Jagar Singh, Konstantin G. Korablev |
2017-05-30 |
| 9660075 |
Integrated circuits with dual silicide contacts and methods for fabricating same |
Shao-Ming Koh, Guillaume Bouche, Jeremy A. Wahl |
2017-05-23 |
| 9659928 |
Semiconductor device having a high-K gate dielectric above an STI region |
Roman Boschke, Markus Forsberg |
2017-05-23 |
| 9660040 |
Transistor contacts self-aligned two dimensions |
Guillaume Bouche, Mark A. Zaleski, Tuhin Guha Neogi, Jason E. Stephens, Jongwook Kye +1 more |
2017-05-23 |
| 9640625 |
Self-aligned gate contact formation |
Guillaume Bouche, Gabriel Padron Wells, Andre P. Labonte, Jing Wan |
2017-05-02 |
| 9620587 |
Three-dimensional electrostatic discharge semiconductor device |
Jagar Singh, Mahadeva Iyer Natarajan |
2017-04-11 |
| 9608086 |
Metal gate structure and method of formation |
Dae Geun Yang, Mariappan Hariharaputhiran, Jing Wan |
2017-03-28 |
| 9601486 |
ESD snapback based clamp for finFET |
Jagar Singh, Mahadeva Iyer Natarajan, Manjunatha Prabhu, Anil Kumar |
2017-03-21 |
| 9583351 |
Inverted contact |
— |
2017-02-28 |
