| 9515135 |
Edge termination structures for silicon carbide devices |
Anant Agarwal, Allan Ward |
2016-12-06 |
| 9478616 |
Semiconductor device having high performance channel |
Sarit Dhar, Lin Cheng, Anant Agarwal |
2016-10-25 |
| 9431525 |
IGBT with bidirectional conduction |
Qingchun Zhang |
2016-08-30 |
| 9396946 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Erik Maki +2 more |
2016-07-19 |
| 9385182 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
Jason Henning, Qingchun Zhang |
2016-07-05 |
| 9349596 |
Methods of processing semiconductor wafers having silicon carbide power devices thereon |
Anant Agarwal, Matthew Donofrio |
2016-05-24 |
| 9343540 |
Transistors with a gate insulation layer having a channel depleting interfacial charge |
Sarit Dhar |
2016-05-17 |
| 9337268 |
SiC devices with high blocking voltage terminated by a negative bevel |
Qingchun Zhang, Craig Capell, Anant Agarwal |
2016-05-10 |
| 9312343 |
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
Qingchun Zhang, Anant Agarwal, Sarit Dhar |
2016-04-12 |
| 9312256 |
Bidirectional silicon carbide transient voltage supression devices |
Sarah Haney |
2016-04-12 |
| 9269580 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Jason Gurganus |
2016-02-23 |
| 9231122 |
Schottky diode |
Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen |
2016-01-05 |