| 9530699 |
Semiconductor device including gate channel having adjusted threshold voltage |
Pranita Kerber, Alexander Reznicek |
2016-12-27 |
| 9505611 |
Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow |
Fei Liu, Keith Kwong Hon Wong |
2016-11-29 |
| 9502420 |
Structure and method for highly strained germanium channel fins for high mobility pFINFETs |
Stephen W. Bedell, Lisa F. Edge, Pranita Kerber, Alexander Reznicek |
2016-11-22 |
| 9502408 |
FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same |
Pranita Kerber, Alexander Reznicek |
2016-11-22 |
| 9443873 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Alexander Reznicek, Dominic J. Schepis |
2016-09-13 |
| 9443963 |
SiGe FinFET with improved junction doping control |
Pranita Kerber, Alexander Reznicek |
2016-09-13 |
| 9412865 |
Reduced resistance short-channel InGaAs planar MOSFET |
Pranita Kerber, Alexander Reznicek |
2016-08-09 |
| 9391198 |
Strained semiconductor trampoline |
Pranita Kerber, Alexander Reznicek, Dominic J. Schepis |
2016-07-12 |
| 9391173 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions |
Keith E. Fogel, Pranita Kerber, Alexander Reznicek |
2016-07-12 |
| 9379219 |
SiGe finFET with improved junction doping control |
Pranita Kerber, Alexander Reznicek |
2016-06-28 |
| 9276118 |
FinFET device having a merge source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same |
Pranita Kerber, Alexander Reznicek |
2016-03-01 |
| 9275908 |
Semiconductor device including gate channel having adjusted threshold voltage |
Pranita Kerber, Alexander Reznicek |
2016-03-01 |
| 9230992 |
Semiconductor device including gate channel having adjusted threshold voltage |
Pranita Kerber, Alexander Reznicek |
2016-01-05 |
