| 9515199 |
Power semiconductor devices having superjunction structures with implanted sidewalls |
Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner |
2016-12-06 |
| 9484413 |
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions |
Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala |
2016-11-01 |
| 9478616 |
Semiconductor device having high performance channel |
Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal |
2016-10-25 |
| 9425265 |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
Edward Robert Van Brunt, Vipindas Pala, Anant Agarwal |
2016-08-23 |
| 9396946 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Erik Maki +2 more |
2016-07-19 |
| 9349797 |
SiC devices with high blocking voltage terminated by a negative bevel |
Anant Agarwal, Michael O'Loughlin, Albert Augustus Burk, Jr., John Williams Palmour |
2016-05-24 |
| 9331197 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour |
2016-05-03 |
| 9318597 |
Layout configurations for integrating schottky contacts into a power transistor device |
Vipindas Pala, Edward Robert Van Brunt, John Williams Palmour |
2016-04-19 |
| 9306061 |
Field effect transistor devices with protective regions |
Anant Agarwal, Vipindas Pala, John Williams Palmour |
2016-04-05 |
| 9269580 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Jason Gurganus |
2016-02-23 |
| 9240476 |
Field effect transistor devices with buried well regions and epitaxial layers |
Vipindis Pala, Jason Henning, Anant Agarwal, John Williams Palmour |
2016-01-19 |
| 9236433 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer |
Vipindas Pala, Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Anant Agarwal, John Williams Palmour |
2016-01-12 |