Issued Patents 2016
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508589 | Conductive layer routing | Stanley Seungchul Song, Kern Rim, Zhongze Wang, Xiangdong Chen, Choh Fei Yeap | 2016-11-29 |
| 9508439 | Non-volatile multiple time programmable memory device | Xia Li, Xiao Lu, Matthew Michael Nowak, Seung H. Kang, Xiaonan Chen +2 more | 2016-11-29 |
| 9502414 | Adjacent device isolation | Vladimir Machkaoutsan, Mustafa Badaroglu, Stanley Seungchul Song, Choh Fei Yeap | 2016-11-22 |
| 9502283 | Electron-beam (E-beam) based semiconductor device features | Stanley Seungchul Song, Da Yang, Choh Fei Yeap | 2016-11-22 |
| 9496181 | Sub-fin device isolation | Stanley Seungchul Song, Vladimir Machkaoutsan, Mustafa Badaroglu, Choh Fei Yeap | 2016-11-15 |
| 9478490 | Capacitor from second level middle-of-line layer in combination with decoupling capacitors | John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Zhongze Wang | 2016-10-25 |
| 9478541 | Half node scaling for vertical structures | Stanley Seungchul Song, Kern Rim, Matthew Michael Nowak, Choh Fei Yeap, Roawen Chen | 2016-10-25 |
| 9478637 | Scaling EOT by eliminating interfacial layers from high-K/metal gates of MOS devices | — | 2016-10-25 |
| 9472453 | Systems and methods of forming a reduced capacitance device | John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Choh Fei Yeap | 2016-10-18 |
| 9425096 | Air gap between tungsten metal lines for interconnects with reduced RC delay | Shiqun Gu, Matthew Michael Nowak | 2016-08-23 |
| 9343357 | Selective conductive barrier layer formation | John Jianhong Zhu, Choh Fei Yeap | 2016-05-17 |
| 9306066 | Method and apparatus of stressed FIN NMOS FinFET | Choh Fei Yeap | 2016-04-05 |
| 9299840 | FinFETs and methods for forming the same | — | 2016-03-29 |
| 9257556 | Silicon germanium FinFET formation by Ge condensation | Vladimir Machkaoutsan, Kern Rim, Stanley Seungchul Song, Choh Fei Yeap | 2016-02-09 |
| 9240480 | Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier | — | 2016-01-19 |