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Normally on high voltage switch |
Madhur Bobde, Hamza Yilmaz, Karthik Padmanabhan |
2016-12-27 |
| 9484453 |
Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
Hamza Yilmaz, Madhur Bobde, Hong Chang, Yeeheng Lee, Jongoh Kim +2 more |
2016-11-01 |
| 9450088 |
High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
Yeeheng Lee, Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz +2 more |
2016-09-20 |
| 9412733 |
MOSFET with integrated schottky diode |
Yeeheng Lee |
2016-08-09 |
| 9391193 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Dean E. Probst |
2016-07-12 |
| 9356022 |
Semiconductor device with termination structure for power MOSFET applications |
Yeeheng Lee, Madhur Bobde, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more |
2016-05-31 |
| 9281394 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Madhur Bobde, Anup Bhalla, Ji Pan +2 more |
2016-03-08 |
| 9281416 |
Trench MOSFET with integrated Schottky barrier diode |
Yi Su, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2016-03-08 |