Issued Patents 2016
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9412667 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2016-08-09 |
| 9373501 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more | 2016-06-21 |
| 9269786 | Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors | Anthony I. Chou, Arvind Kumar, Shreesh Narasimha, Kai Zhao | 2016-02-23 |