Issued Patents 2011
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8055988 | Multi-bit memory error detection and correction system and method | — | 2011-11-08 |
| 8036014 | Phase change memory program method without over-reset | Ming-Hsiu Lee, Matthew J. Breitwisch | 2011-10-11 |
| 8030635 | Polysilicon plug bipolar transistor for phase change memory | Hsiang-Lan Lung, Erh-Kun Lai, Bipin Rajendran | 2011-10-04 |
| 8017432 | Deposition of amorphous phase change material | Alejandro G. Schrott | 2011-09-13 |
| 8017433 | Post deposition method for regrowth of crystalline phase change material | Stephen M. Rossnagel, Alejandro G. Schrott | 2011-09-13 |
| 8012790 | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell | Matthew J. Breitwisch | 2011-09-06 |
| 8012793 | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide | Gerhard Ingmar Meijer, Alejandro G. Schrott | 2011-09-06 |
| 7989796 | Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement | Alejandro G. Schrott | 2011-08-02 |
| 7983069 | Write operations for phase-change-material memory | Louis Hsu, Brian L. Ji | 2011-07-19 |
| 7981755 | Self aligned ring electrodes | Matthew J. Breitwisch, Eric A. Joseph, Alejandro G. Schrott, Brandon Yee | 2011-07-19 |
| 7981748 | Method for fabricating a vertical field effect transistor array comprising a plurality of semiconductor pillars | Matthew J. Breitwisch, Alejandro G. Schrott | 2011-07-19 |
| 7978509 | Phase change memory with dual word lines and source lines and method of operating same | Hsiang-Lan Lung | 2011-07-12 |
| 7972966 | Etching of tungsten selective to titanium nitride | Matthew J. Breitwisch, Eric A. Joseph, Alejandro G. Schrott, Brandon Yee | 2011-07-05 |
| 7968876 | Phase change memory cell having vertical channel access transistor | Hsiang-Lan Lung | 2011-06-28 |
| 7971123 | Multi-bit error correction scheme in multi-level memory storage system | — | 2011-06-28 |
| 7965537 | Phase change memory with finite annular conductive path | Matthew J. Breitwisch, Bipin Rajendran | 2011-06-21 |
| 7966547 | Multi-bit error correction scheme in multi-level memory storage system | — | 2011-06-21 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Eric A. Joseph, Matthew J. Breitwisch, Roger W. Cheek | 2011-06-14 |
| 7960808 | Reprogrammable fuse structure and method | Geoffrey Burr, Chandrasekharan Kothandaraman, Xiao Hu Liu, Stephen M. Rossnagel, Christy S. Tyberg +1 more | 2011-06-14 |
| 7943919 | Integrated circuit with upstanding stylus | David V. Horak | 2011-05-17 |
| 7943420 | Single mask adder phase change memory element | Matthew J. Breitwisch | 2011-05-17 |
| 7944740 | Multi-level cell programming of PCM by varying the reset amplitude | Ming-Hsiu Lee, Thomas Nirschi, Bipin Rajendran | 2011-05-17 |
| 7935564 | Self-converging bottom electrode ring | Matthew J. Breitwisch, Hsiang-Lan Lung | 2011-05-03 |
| 7932507 | Current constricting phase change memory element structure | Chieh-Fang Chen, Shih-Hung Chen, Yi-Chou Chen, Thomas Happ, Chia-Hua Ho +4 more | 2011-04-26 |
| 7932506 | Fully self-aligned pore-type memory cell having diode access device | Hsiang-Lan Lung | 2011-04-26 |