Issued Patents 2011
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8036014 | Phase change memory program method without over-reset | Ming-Hsiu Lee, Chung H. Lam | 2011-10-11 |
| 8030130 | Phase change memory device with plated phase change material | Eric A. Joseph, Alejandro G. Schrott, Xiaoyan Shao | 2011-10-04 |
| 8023345 | Iteratively writing contents to memory locations using a statistical model | Roger W. Cheek, Stefanie Chiras, Ibrahim M. Elfadel, Michele M. Franceschini, John P. Karidis +3 more | 2011-09-20 |
| 8012790 | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell | Chung H. Lam | 2011-09-06 |
| 7985654 | Planarization stop layer in phase change memory integration | Yu Zhu | 2011-07-26 |
| 7981748 | Method for fabricating a vertical field effect transistor array comprising a plurality of semiconductor pillars | Chung H. Lam, Alejandro G. Schrott | 2011-07-19 |
| 7981755 | Self aligned ring electrodes | Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott, Brandon Yee | 2011-07-19 |
| 7972966 | Etching of tungsten selective to titanium nitride | Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott, Brandon Yee | 2011-07-05 |
| 7965537 | Phase change memory with finite annular conductive path | Chung H. Lam, Bipin Rajendran | 2011-06-21 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Roger W. Cheek | 2011-06-14 |
| 7943420 | Single mask adder phase change memory element | Chung H. Lam | 2011-05-17 |
| 7935564 | Self-converging bottom electrode ring | Chung H. Lam, Hsiang-Lan Lung | 2011-05-03 |
| 7927911 | Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment | Kuan-Neng Chen | 2011-04-19 |
| 7910911 | Phase change memory with tapered heater | Thomas Happ, Eric A. Joseph, Hsiang-Lan Lung, Jan Boris Philipp | 2011-03-22 |
| 7906368 | Phase change memory with tapered heater | Thomas Happ, Eric A. Joseph, Hsiang-Lan Lung, Jan Boris Philipp | 2011-03-15 |
| 7894272 | Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition | Chung H. Lam, Bipin Rajendran | 2011-02-22 |
| 7888743 | Substrate backgate for trigate FET | Brent A. Anderson, Edward J. Nowak | 2011-02-15 |
| 7880194 | Cross point switch using phase change material | Chung H. Lam, Prabhakar Kudva | 2011-02-01 |
| 7879645 | Fill-in etching free pore device | Hsiang-Lan Lung, Chung H. Lam, Chieh-Fang Chen | 2011-02-01 |
| 7868313 | Phase change memory device and method of manufacture | Chung H. Lam, Hsiang-Lan Lung, Bipin Rajendran, Alejandro G. Schrott, Yu Zhu | 2011-01-11 |
| 7864566 | Phase change memory programming method without reset over-write | Chung H. Lam | 2011-01-04 |