Issued Patents 2011
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8053314 | Asymmetric field effect transistor structure and method | Brent A. Anderson, William F. Clark, Jr., Edward J. Nowak | 2011-11-08 |
| 8039875 | Structure for pixel sensor cell that collects electrons and holes | James W. Adkisson, John J. Ellis-Monaghan, Mark D. Jaffe, Jeffrey B. Johnson, Alain Loiseau | 2011-10-18 |
| 8034699 | Isolation with offset deep well implants | James W. Adkisson, Mark D. Jaffe, Alain Loiseau | 2011-10-11 |
| 8034692 | Structure and method for manufacturing asymmetric devices | Hasan M. Nayfeh, Arvind Kumar, Nivo Rovedo, Robert R. Robison | 2011-10-11 |
| 8028924 | Device and method for providing an integrated circuit with a unique identification | Brent A. Anderson, Alain Loiseau, Anthony K. Stamper, Mickey H. Yu | 2011-10-04 |
| 8008146 | Different thickness oxide silicon nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen, Jeffrey W. Sleight | 2011-08-30 |
| 7994612 | FinFETs single-sided implant formation | Brent A. Anderson, Josephine B. Chang, Omer H. Dokumaci, Edward J. Nowak | 2011-08-09 |
| 7982269 | Transistors having asymmetric strained source/drain portions | Brent A. Anderson, Edward J. Nowak | 2011-07-19 |
| 7981772 | Methods of fabricating nanostructures | Brent A. Anderson, Edward J. Nowak, Jeffrey W. Sleight | 2011-07-19 |
| 7977711 | Pixel sensor cell for collecting electrons and holes | James W. Adkisson, John J. Ellis-Monaghan, Mark D. Jaffe, Jeffrey B. Johnson, Alain Loiseau | 2011-07-12 |
| 7971158 | Spacer fill structure, method and design structure for reducing device variation | Brent A. Anderson, Edward J. Nowak, Jed H. Rankin | 2011-06-28 |
| 7964465 | Transistors having asymmetric strained source/drain portions | Brent A. Anderson, Edward J. Nowak | 2011-06-21 |
| 7956415 | SOI transistor having a carrier recombination structure in a body | Anthony I. Chou, Arvind Kumar, Shreesh Narasimha | 2011-06-07 |
| 7943997 | Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s) | James W. Adkisson, Brent A. Anderson, William F. Clark, Jr., Edward J. Nowak | 2011-05-17 |
| 7939417 | Bipolar transistor and back-gated transistor structure and method | William F. Clark, Jr., Edward J. Nowak | 2011-05-10 |
| 7937675 | Structure including transistor having gate and body in direct self-aligned contact | Brent A. Anderson, William F. Clark, Jr., Edward J. Nowak | 2011-05-03 |
| 7915670 | Asymmetric field effect transistor structure and method | Brent A. Anderson, William F. Clark, Jr., Edward J. Nowak | 2011-03-29 |
| 7915162 | Method of forming damascene filament wires | Brent A. Anderson, Jeffrey P. Gambino, Anthony K. Stamper | 2011-03-29 |
| 7910418 | Complementary metal gate dense interconnect and method of manufacturing | Brent A. Anderson, William F. Clark, Jr., Edward J. Nowak | 2011-03-22 |
| 7902000 | MugFET with stub source and drain regions | Brent A. Anderson, Edward J. Nowak | 2011-03-08 |
| 7902625 | Metal-gate thermocouple | Brent A. Anderson, Edward J. Nowak | 2011-03-08 |
| 7902608 | Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions and an underlying floating well section | Brent A. Anderson, Edward J. Nowak | 2011-03-08 |
| 7888736 | MUGFET with optimized fill structures | Brent A. Anderson, Edward J. Nowak | 2011-02-15 |