Issued Patents 2011
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8080432 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2011-12-20 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2011-11-15 |
| 8035931 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Tong Zhao, Hui-Chuan Wang | 2011-10-11 |
| 8012316 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Kunliang Zhang, Dan Abels, Min Li, Chen-Jung Chien, Yu-Hsia Chen | 2011-09-06 |
| 7983011 | AP1 layer for TMR device | Tong Zhao, Hui-Chuan Wang | 2011-07-19 |
| 7950136 | Process of making an improved AP1 layer for a TMR device | Tong Zhao, Hui-Chuan Wang | 2011-05-31 |
| 7936027 | Method of MRAM fabrication with zero electrical shorting | Rongfu Xiao, Tom Zhong, Witold Kula | 2011-05-03 |
| 7919407 | Method of high density field induced MRAM process | Tom Zhong, Wai-Ming J. Kan, Daniel Liu, Adam Zhong | 2011-04-05 |
| 7918014 | Method of manufacturing a CPP structure with enhanced GMR ratio | Kunliang Zhang, Min Li, Yu-Hsia Chen | 2011-04-05 |
| 7884433 | High density spin-transfer torque MRAM process | Tom Zhong, Rongfu Xiao, Adam Zhong, Wai-Ming J. Kan, Daniel Liu | 2011-02-08 |
| 7863060 | Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices | Rodolfo P. Belen, Tom Zhong, Witold Kula | 2011-01-04 |