Issued Patents 2011
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8064244 | Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications | Min Li, Yuchen Zhou, Soichi Oikawa, Kenichiro Yamada, Katsuhiko Koui | 2011-11-22 |
| 8059374 | TMR device with novel free layer structure | Tong Zhao, Hui-Chuan Wang, Min Li | 2011-11-15 |
| 8031445 | Low noise magneto-resistive sensor utilizing magnetic noise cancellation | Yuchen Zhou, Yu-Hsai Chen, Tong Zhao, Moris Dovek | 2011-10-04 |
| 8031441 | CPP device with an enhanced dR/R ratio | Min Li, Moris Dovek, Yue Liu | 2011-10-04 |
| 8023218 | Electric field assisted magnetic recording | Yuchen Zhou, Kowang Liu, Erhard Schreck | 2011-09-20 |
| 8012316 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Dan Abels, Min Li, Chyu-Jiuh Torng, Chen-Jung Chien, Yu-Hsia Chen | 2011-09-06 |
| 8008740 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Tong Zhao, Hui-Chuan Wang, Yu-Hsia Chen, Min Li | 2011-08-30 |
| 8004794 | Perpendicular magnetic recording head laminated with AFM-FM phase change material | Yuchen Zhou, Kenichi Takano, Kowang Liu, Liejie Guan, Moris Dovek +1 more | 2011-08-23 |
| 7990660 | Multiple CCP layers in magnetic read head devices | Min Li, Yu-Hsia Chen | 2011-08-02 |
| 7986498 | TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer | Hui-Chuan Wang, Tong Zhao, Min Li | 2011-07-26 |
| 7978442 | CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer | Min Li, Yue Liu, Hideaki Fukuzawa, Hiromi Yuasa | 2011-07-12 |
| 7978439 | TMR or CPP structure with improved exchange properties | Hui-Chuan Wang, Tong Zhao, Min Li | 2011-07-12 |
| 7918014 | Method of manufacturing a CPP structure with enhanced GMR ratio | Min Li, Yu-Hsia Chen, Chyu-Jiuh Torng | 2011-04-05 |
| 7872838 | Uniformity in CCP magnetic read head devices | Min Li, Yu-Hsia Chen | 2011-01-18 |
| 7861401 | Method of forming a high performance tunneling magnetoresistive (TMR) element | Hui-Chuan Wang, Tong Zhao, Min Li | 2011-01-04 |