Issued Patents 2011
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8059374 | TMR device with novel free layer structure | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-11-15 |
| 8035931 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Hui-Chuan Wang, Chyu-Jiuh Torng | 2011-10-11 |
| 8031445 | Low noise magneto-resistive sensor utilizing magnetic noise cancellation | Yuchen Zhou, Kunliang Zhang, Yu-Hsai Chen, Moris Dovek | 2011-10-04 |
| 8008740 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Hui-Chuan Wang, Kunliang Zhang, Yu-Hsia Chen, Min Li | 2011-08-30 |
| 8000215 | Voltage pattern for ferroelectric recording head | Andreas Roelofs, Martin Gerard Forrester | 2011-08-16 |
| 7986498 | TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-07-26 |
| 7983011 | AP1 layer for TMR device | Chyu-Jiuh Torng, Hui-Chuan Wang | 2011-07-19 |
| 7978439 | TMR or CPP structure with improved exchange properties | Kunliang Zhang, Hui-Chuan Wang, Min Li | 2011-07-12 |
| 7950136 | Process of making an improved AP1 layer for a TMR device | Chyu-Jiuh Torng, Hui-Chuan Wang | 2011-05-31 |
| 7916513 | Non-destructive read back for ferroelectric data storage device | Shan Hu, Florin Zavaliche, Joachim Walter Ahner, Stephen John Wrazien, Martin Gerard Forrester | 2011-03-29 |
| 7876661 | Non-destructive readback for ferroelectric material | Martin Gerard Forrester, Florin Zavaliche, Dierk Guenter Bolten, Andreas Roelofs | 2011-01-25 |
| 7861401 | Method of forming a high performance tunneling magnetoresistive (TMR) element | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-01-04 |