Issued Patents 2011
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8080432 | High performance MTJ element for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2011-12-20 |
| 8062909 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2011-11-22 |
| 8057925 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same | Ru-Ying Tong | 2011-11-15 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2011-11-15 |
| 8058697 | Spin transfer MRAM device with novel magnetic synthetic free layer | Yimin Guo, Ru-Ying Tong | 2011-11-15 |
| 8039885 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2011-10-18 |
| 7999360 | Underlayer for high performance magnetic tunneling junction MRAM | Liubo Hong, Mao-Min Chen, Ru-Yin Tong | 2011-08-16 |
| 7994596 | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy | Tai Min, Po-Kang Wang | 2011-08-09 |
| 7986497 | Low resistance TMR read head fabricated by a novel oxidation method | Ru-Ying Tong | 2011-07-26 |
| 7978440 | Seed/AFM combination for CCP GMR device | Min Li, Cherng-Chyi Han, Yue Liu, Yu-Hsia Chen, Ru-Ying Tong | 2011-07-12 |
| 7948044 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same | Ru-Ying Tong, Yimin Guo | 2011-05-24 |
| 7936539 | Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers | Ru-Ying Tong | 2011-05-03 |