Issued Patents 2005
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6972250 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Guy M. Cohen, Steven J. Koester +2 more | 2005-12-06 |
| 6963078 | Dual strain-state SiGe layers for microelectronics | — | 2005-11-08 |
| 6949761 | Structure for and method of fabricating a high-mobility field-effect transistor | Steven J. Koester, Qiqing C. Ouyang | 2005-09-27 |
| 6943407 | Low leakage heterojunction vertical transistors and high performance devices thereof | Qiqing C. Ouyang | 2005-09-13 |
| 6927414 | High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof | Qiqing C. Ouyang | 2005-08-09 |
| 6908866 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Basanth Jagannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2005-06-21 |
| 6909186 | High performance FET devices and methods therefor | — | 2005-06-21 |
| 6890835 | Layer transfer of low defect SiGe using an etch-back process | David R. DiMilia, Lijuan Huang | 2005-05-10 |
| 6881259 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | David C. Ahlgren, Basanth Jagannathan, Ryan Wuthrich | 2005-04-19 |
| 6875279 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Basanth Jagannathan, Ryan Wuthrich | 2005-04-05 |
| 6870232 | Scalable MOS field effect transistor | Kevin K. Chan, Khalid EzzEldin Ismail, Stephen A. Rishton, Katherine L. Saenger | 2005-03-22 |
| 6858502 | High speed composite p-channel Si/SiGe heterostructure for field effect devices | Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, Patricia M. Mooney, John A. Ott | 2005-02-22 |
| 6855649 | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing | Silke Christiansen, Alfred Grill, Patricia M. Mooney | 2005-02-15 |
| 6855963 | Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate | Qiqing C. Ouyang | 2005-02-15 |