Issued Patents 2004
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6833572 | Electrode materials with improved hydrogen degradation resistance | Fengyan Zhang, Tingkai Li, Hong Ying, Yoshi Ono | 2004-12-21 |
| 6825519 | Selectively deposited PGO thin film and method for forming same | Tingkai Li, Bruce D. Ulrich | 2004-11-30 |
| 6825086 | Strained-silicon channel CMOS with sacrificial shallow trench isolation oxide liner | Jong-Jan Lee | 2004-11-30 |
| 6825058 | Methods of fabricating trench isolated cross-point memory array | Wei Pan, Wei-Wei Zhuang | 2004-11-30 |
| 6824814 | Preparation of LCPMO thin films which have reversible resistance change properties | Wei-Wei Zhuang, Wei Pan, Masayuki Tajiri | 2004-11-30 |
| 6819583 | Ferroelectric resistor non-volatile memory array | Tingkai Li, Fengyan Zhang | 2004-11-16 |
| 6806554 | Self-aligned SiGe HBT on a SOI substrate | — | 2004-10-19 |
| 6801448 | Common bit/common source line high density 1T1R R-RAM array | — | 2004-10-05 |
| 6794198 | MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides | Tingkai Li, David R. Evans, Bruce D. Ulrich | 2004-09-21 |
| 6793731 | Method for recrystallizing an amorphized silicon germanium film overlying silicon | Jong-Jan Lee, Jer-Shen Maa, Douglas J. Tweet | 2004-09-21 |
| 6780700 | Method of fabricating deep sub-micron CMOS source/drain with MDD and selective CVD silicide | Katsuji Iguchi, Yoshi Ono, Jer-Shen Maa | 2004-08-24 |
| 6780796 | Method of forming relaxed SiGe layer | Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet | 2004-08-24 |
| 6777327 | Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics | Wei Pan, Jer-Shen Maa, David R. Evans | 2004-08-17 |
| 6774004 | Nano-scale resistance cross-point memory array | Wei-Wei Zhuang, Wei Pan, Fengyan Zhang | 2004-08-10 |
| 6774054 | High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application | Fengyan Zhang, Wei-Wei Zhuang, David R. Evans | 2004-08-10 |
| 6767802 | Methods of making relaxed silicon-germanium on insulator via layer transfer | Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet | 2004-07-27 |
| 6764537 | Copper metal precursor | Wei-Wei Zhuang, Lawrence J. Charneski, David R. Evans | 2004-07-20 |
| 6762063 | Method of fabricating non-volatile ferroelectric transistors | Fengyan Zhang, Tingkai Li | 2004-07-13 |
| 6759250 | Deposition method for lead germanate ferroelectric structure with multi-layered electrode | Fengyan Zhang, Tingkai Li | 2004-07-06 |
| 6759252 | Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials | Fengyan Zhang, Hong Ying | 2004-07-06 |
| 6759249 | Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory | Wei-Wei Zhuang | 2004-07-06 |
| 6753562 | Spin transistor magnetic random access memory device | Jinke Tang, Keizo Sakiyama | 2004-06-22 |
| 6750100 | Nano-meter memory device and method of making the same | Tomoya Baba, Tetsuya Ohnishi | 2004-06-15 |
| 6746910 | Method of fabricating self-aligned cross-point memory array | Wei Pan, Wei-Wei Zhuang | 2004-06-08 |
| 6746902 | Method to form relaxed sige layer with high ge content | Jer-Shen Maa, Douglas J. Tweet | 2004-06-08 |