Issued Patents 2004
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6833572 | Electrode materials with improved hydrogen degradation resistance | Tingkai Li, Hong Ying, Yoshi Ono, Sheng Teng Hsu | 2004-12-21 |
| 6819583 | Ferroelectric resistor non-volatile memory array | Sheng Teng Hsu, Tingkai Li | 2004-11-16 |
| 6774054 | High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application | Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu | 2004-08-10 |
| 6774004 | Nano-scale resistance cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang, Wei Pan | 2004-08-10 |
| 6762063 | Method of fabricating non-volatile ferroelectric transistors | Sheng Teng Hsu, Tingkai Li | 2004-07-13 |
| 6759250 | Deposition method for lead germanate ferroelectric structure with multi-layered electrode | Tingkai Li, Sheng Teng Hsu | 2004-07-06 |
| 6759252 | Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials | Sheng Teng Hsu, Hong Ying | 2004-07-06 |
| 6737693 | Ferroelastic integrated circuit device | Tingkai Li, Yoshi Ono, Sheng Teng Hsu | 2004-05-18 |
| 6720258 | Method of fabricating a nickel silicide on a substrate | Jer-Shen Maa, Douglas J. Tweet, Yoshi Ono, Sheng Teng Hsu | 2004-04-13 |
| 6711049 | One transistor cell FeRAM memory array | Sheng Teng Hsu, Jong-Jan Lee, Nobuyoshi Awaya | 2004-03-23 |
| 6703655 | Ferroelectric memory transistor | Sheng Teng Hsu, Tingkai Li | 2004-03-09 |
| 6682995 | Iridium conductive electrode/barrier structure and method for same | Jer-Shen Maa, Sheng Teng Hsu | 2004-01-27 |
| 6673664 | Method of making a self-aligned ferroelectric memory transistor | Sheng Teng Hsu, Tingkai Li | 2004-01-06 |