Issued Patents 2004
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6793731 | Method for recrystallizing an amorphized silicon germanium film overlying silicon | Sheng Teng Hsu, Jong-Jan Lee, Douglas J. Tweet | 2004-09-21 |
| 6780796 | Method of forming relaxed SiGe layer | Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu | 2004-08-24 |
| 6780700 | Method of fabricating deep sub-micron CMOS source/drain with MDD and selective CVD silicide | Katsuji Iguchi, Sheng Teng Hsu, Yoshi Ono | 2004-08-24 |
| 6777327 | Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics | Wei Pan, David R. Evans, Sheng Teng Hsu | 2004-08-17 |
| 6767802 | Methods of making relaxed silicon-germanium on insulator via layer transfer | Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu | 2004-07-27 |
| 6746902 | Method to form relaxed sige layer with high ge content | Douglas J. Tweet, Sheng Teng Hsu | 2004-06-08 |
| 6720258 | Method of fabricating a nickel silicide on a substrate | Douglas J. Tweet, Yoshi Ono, Fengyan Zhang, Sheng Teng Hsu | 2004-04-13 |
| 6703293 | Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates | Douglas J. Tweet, Sheng Teng Hsu, Jong-Jan Lee | 2004-03-09 |
| 6699764 | Method for amorphization re-crystallization of Si1-xGex films on silicon substrates | Douglas J. Tweet, Jong-Jan Lee, Sheng Teng Hsu | 2004-03-02 |
| 6682995 | Iridium conductive electrode/barrier structure and method for same | Fengyan Zhang, Sheng Teng Hsu | 2004-01-27 |